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  2. MJL21194G NPN High Power Transistor

MJL21194G NPN High Power Transistor

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R 24.60 24.6 ZAR R 24.60

R 21.39

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Silicon Power Transistors

The MJL21194G utilizes a Perforated Emitter technology specifically designed for high-power audio output, disk head positioners, and linear applications.

Features:

• Total Harmonic Distortion Characterized
• High DC Current Gain
• Excellent Gain Linearity
• High SOA
• These Devices are Pb−Free and are RoHS Compliant* Datasheet: MJL21194G

Technical information:

Collector Emitter voltage

250V

Collector base voltage

400V

Emitter base voltage

5V

 Continuous collector current

16A

Peak collector current

5A